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| DCR1673SA DCR1673SA Phase Control Thyristor FDS5646-2.0 February 2004 FEATURES I Double Side Cooling I High Surge Capability I High Mean Current I Fatigue Free KEY PARAMETERS VDRM IT(AV) ITSM dVdt* dI/dt 2800V 5088A 83000A 1000V/s 250A/s APPLICATIONS I High Power Drives I High Voltage Power Supplies I DC Motor Control *Higher dV/dt selections available VOLTAGE RATINGS Type Number Repetitive Peak Voltages VDRM VRRM V 2800 2700 2600 2500 2400 Conditions DCR1673SA28 DCR1673SA27 DCR1673SA26 DCR1673SA25 DCR1673SA24 Tvj = 0 to 125C, IDRM = IRRM = 500mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V Respectively Outline type code: A. See Package Details for further information. Fig. 1 Package outline Lower voltage grades available. ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR1673SA27 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. 1/8 www.dynexsemi.com DCR1673SA CURRENT RATINGS Tcase = 60C unless stated otherwise Symbol Double Side Cooled IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 5088 7995 7280 A A A Parameter Conditions Max. Units Single Side Cooled (Anode side) IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 3300 5180 4350 A A A CURRENT RATINGS Tcase = 80C unless stated otherwise Symbol Double Side Cooled IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 3990 6320 5570 A A A Parameter Conditions Max. Units Single Side Cooled (Anode side) IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 2540 3980 3250 A A A 2/8 www.dynexsemi.com DCR1673SA SURGE RATINGS Symbol ITSM I2t ITSM I2t Parameter Surge (non-repetitive) on-state current I2t for fusing Surge (non-repetitive) on-state current I2t for fusing Conditions 10ms half sine; Tcase = 125oC VR = 50% VRRM - 1/4 sine 10ms half sine; Tcase = 125oC VR = 0 Max. 66.4 22.0 x 106 83.0 34.4 x 106 Units kA A2s kA A2s THERMAL AND MECHANICAL DATA Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 83.0kN with mounting compound On-state (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Clamping force -55 74.0 125 125 91.0 o Min. dc Anode dc - Max. 0.0065 0.013 0.013 0.001 0.002 135 Units o C/W o C/W C/W C/W C/W o o Double side Single side o Rth(c-h) Thermal resistance - case to heatsink o C C C o kN 3/8 www.dynexsemi.com DCR1673SA DYNAMIC CHARACTERISTICS Symbol IRRM/IDRM dV/dt Parameter Peak reverse and off-state current Maximum linear rate of rise of off-state voltage Conditions At VRRM/VDRM, Tcase = 125oC To 67% VDRM Tj = 125oC From 67% VDRM to 1100A Gate source 1A tr = 0.5s, Tj = 125oC At Tvj = 125oC At Tvj = 125oC VD = 67% VDRM, Gate source 20V, 10 tr = 0.5s, Tj = 25oC Tj = 25oC, VD = 5V Tj = 25oC, Rg-k = Repetitive 50Hz Non-repetitive Typ. 1.0 150 40 Max. 500 1000 250 500 0.82 0.076 1.5 750 200 Units mA V/s A/s A/s V m s mA mA dI/dt Rate of rise of on-state current VT(TO) rT tgd IL IH Threshold voltage On-state slope resistance Delay time Latching current Holding current GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol VGT IGT VGD VFGM VFGN VRGM IFGM PGM PG(AV) Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Peak forward gate voltage Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate power Mean gate power Anode positive with respect to cathode See table, gate characteristics curve Conditions VDRM = 5V, Tcase = 25oC VDRM = 5V, Tcase = 25oC At VDRM Tcase = 125oC Anode positive with respect to cathode Anode negative with respect to cathode Max. 3.5 500 0.25 30 0.25 5 30 150 10 Units V mA V V V V A W W 4/8 www.dynexsemi.com DCR1673SA CURVES 10000 9000 8000 7000 6000 5000 4000 3000 2000 1000 0 0.6 10000 Measured under pulse conditions Tj = 125C 9000 8000 Instantaneous on-state current, IT - (A) Mean power dissipation - (W) 7000 6000 5000 4000 3000 2000 1000 0 0 dc 1/2 wave 3 phase 6 phase 12 phase 1000 2000 3000 4000 5000 Mean on-state current, IT - (A) 6000 7000 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 Instantaneous on-state voltage, VT - (V) 1.5 1.6 Fig.2 Maximum (limit) on-state characteristics VTM Equation:VTM = A + Bln (IT) + C.IT+D.IT Where A = 0.6180535 B = 0.007965 C = 4.57 x 10-5 D = 4.003 x 10-3 these values are valid for Tj = 125C for IT 200A to 10000A Fig.3 Dissipation curves 5/8 www.dynexsemi.com DCR1673SA 100000 Tj = 125C 100 Table gives pulse power PGM in Watts Pulse Width s 100 200 500 1ms 10ms Frequency Hz 50 150 150 150 150 20 100 150 150 150 100 400 150 125 100 25 - VFGM Recovered charge Qr - (C) Gate trigger voltage, VGT - (V) IT = 3000A 100W 50W 20W 10W 10 10000 1 er pp U 9 it m Li 9% Tj = 25C VGD Lo IGD w L er im it 1 % 1000 1 10 Rate of decay of on-state current, dI/dt - (A/s) 100 0.1 0.001 IFGM 0.01 0.1 1.0 Gate trigger current, IGT - (A) 10 Fig.4 Recovered charge 200 0.1 Fig.5 Gate characteristics Peak half sinewave on-state current - (kA) 150 30 Anode side cooled Thermal impedance - (C/W) 0.01 Double side cooled I2t value for fusing - (A2s x 106) 100 20 I2t 50 10 0.001 Conduction Effective thermal resistance Junction to case C/W Double side 0.0065 0.0072 0.0073 0.0076 Anode side 0.0130 0.0137 0.0138 0.0141 0.0001 0.001 d.c. Halfwave 3 phase 120 6 phase 60 0 1 100 10 ms 1 5 10 0 50 0.01 0.1 Time - (s) 1 10 Cycles at 50Hz Duration Fig.6 Transient thermal impedance - junction to case Fig.7 Surge (non-repetitive) on-state current vs time (with 50% VRRM at Tcase = 125C) 6/8 www.dynexsemi.com DCR1673SA PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes O3.6 x 2.0 deep (In both electrodes) Cathode tab Cathode O148 nom O100 nom O1.5 Gate 35.0 0.5 O100 nom O138.5 Nominal weight: 2575g Clamping force: 83kN 10% Lead length: 420mm Lead terminal connector: M4 ring Package outline type code: A Fig.8 Package outline Anode 7/8 www.dynexsemi.com POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 (c) Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRODUCED IN UNITED KINGDOM This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. www.dynexsemi.com |
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